Publication
Measurement of Thickness of High-Resistivity Substrate By Photoconduction Enhanced Capacitance Displacement Sensor | T. -H. Lee and M. -C. Lin | ECS Transactions | 2017 | 77 (11), 1747-1752 |
Nanoscale Layer Transfer by Hydrogen Ion-Cut Processing: A Brief Review Through Recent U.S. Patents | Benjamin T.-H. Lee | Recent Patents on Nanotechnology | 2017 | 11(1), 42-49 |
Eliminating Thickness Measurement Uncertainty of Capacitive Displacement Sensor in High Resistivity Substrate by Photoconduction | Benjamin T.-H. Lee and M. -C. Lin | ECS Journal of Solid State Science and Technology | 2017 | 6(5) 323-325 |
Sharpening Si nanocrystals on the bulk surface by nanoscale electrochemistry thru controlling the hole current with the irradiation of near-infrared laser | C.-C. Chiang and T. -H. Lee | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2016 | 163 ( 9), E258-E262 |
Inhibition Effect of a Laser on Thickness Increase of P-type Porous Silicon in Electrochemical Anodizing | C. -C. Chiang , Pi-Chun Juan, and T. -H. Lee | Journal of the Electrochemical Society | 2016 | 163 (5) H265-H268 |
The Suppression Effect of 830nm Laser Irradiation on Porous Silicon Formation | C. -C. Chiang, Y.-C Huang, P.- C. Juan, F. -S. Lo, and T. -H. Lee | ECS Transactions | 2015 | 69(35): 1-7 |
Modeling a thermionic energy converter using finite-difference time-domain particle-in-cell simulations | F. -S. Lo, P. S. Lu, B. Ragan-Kelley, A. Minnich, T. -H. Lee, M. C. Lin, and J. P. Verboncoeur | Physics of Plasma | 2014 | 21, 023510 |
Effect of Microwave Processing on Oxygen Plasma-Assisted Bonding Enabling Rapid Layer Transfer | C. -C. Ho, F. S. Lo, S. C. Jeng, J. -H. Li, H. -H. Chang, and T. -H. Lee | ECS Solid State Letters | 2014 | 3(1) P4-P6 |
Increasing More Bonding Energy in Nitrogen Plasma-activated Wafer Bonding by HF-dip | F. -S. Lo, C. C. Chiang, C. Li, and T. -H. Lee | ECS Solid-State Letters | 2014 | 3 (8) P102-P104 |
Thermal Stress Induced Thin Film Transfer from Single-crystal Silicon Layer on Sapphire Substrate | F. S. Lo, R. Y. Xu, C. C. Ho, C. Li, and T. -H. Lee | Integrated Ferroelectrics | 2013 | 144.1: 73-78 |